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B Nanoelectronic Materials

EAM Research Area B – Nanoelectronic Materials

Low-cost, versatile electronic materials and devices

Two major types of materials including their engineering into ordered structures and devices are investigated:

  • Molecular and polymer-based electronics for the engineering of new hierarchically ordered multilayer assemblies and electron devices including solar cells and field effect transistors
  • Particulate-based electronics are possibly characterized by a long lifetime, stability, and reliability. Fundamental questions to be addressed are electron transfer across particulate interfaces, self-organization of semiconducting nanoparticles into particulate and hybrid thin films and their integration into functional devices.The main technological challenge is to demonstrate the construction of basic electronic circuits form printable nanoparticulate pastes.

The major trust of Research Area B is to integrate inorganic semiconductor and conducting particles together with multifunctional organic molecules, such a surface active and solubilizing molecules as well as redox-active components like π -conjugated nanowires, carbon nanotubes, and fullerene units as well as semiconducting and insulating polymers. The goal is to establish a universal tool box system with complementary components for the assembly of future nanoelectronic materials.

A) Scanning electron microscopy (SEM) image of cross-section of a complete perovskite device based on ITO/C60-SAM/Perovskite/PDCBT/Ta-WOx/Au, the scale bar of 500 nm. (B) Corresponding SEM image of a focused ion beam (FIB) polished cross-section, the scale bar of 500 nm.

A) Scanning electron microscopy (SEM) image of cross-section of a complete perovskite device based on ITO/C60-SAM/Perovskite/PDCBT/Ta-WOx/Au, the scale bar of 500 nm. (B) Corresponding SEM image of a focused ion beam (FIB) polished cross-section, the scale bar of 500 nm.